STMicroelectronics Unveils Automotive Gate Driver for Scalable, High-Performance EV Powertrain Designs

STMicroelectronics has introduced the STGAP4S, a new galvanically isolated automotive gate driver engineered for silicon carbide (SiC) MOSFETs and IGBTs, designed to simplify and scale high-performance inverter systems for electric vehicles (EVs).

The STGAP4S features integrated analog-digital converters (ADC) and a fully protected flyback controller, delivering a compact, high-functionality solution suited for a range of EV powertrain designs. Its scalable gate-current architecture allows for flexibility across power levels, from standard to high-power inverters using parallel power switches, all while supporting voltages up to 1200V.

With its advanced diagnostic capabilities, the STGAP4S enables automotive systems to meet ISO 26262 ASIL-D requirements for functional safety. Built-in protections include active Miller clamping, under-voltage and over-voltage lockout (UVLO/OVLO), and sensors for desaturation, over-current, and over-temperature events. All parameters, including fault thresholds and deadtime, are configurable via SPI, enabling tailored protection strategies.

The device’s galvanic isolation barrier offers 6.4kV of protection between high and low voltage sections, ensuring robust operation in harsh automotive environments.

To support developers, STMicroelectronics has released the EVALSTGAP4S evaluation board, incorporating two drivers and enabling scalable testing up to three-phase inverter setups.

The STGAP4S is currently available in volume production in a SO-36W wide-body dual-inline package, with pricing starting at USD 4.66 for orders of 1000 units.