RIR Power Electronics Expands Portfolio with Advanced SiC MOSFETs for EVs and Energy Systems

RIR Power Electronics Ltd. has expanded its semiconductor product portfolio with the launch of 1200V Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) designed to deliver higher efficiency and reliability in advanced power electronics applications.

The newly introduced SiC MOSFETs are widely used in electric vehicle onboard chargers, EV charging infrastructure, traction inverters, megawatt charging systems (MCS), solar inverters, energy storage systems, UPS, power supplies, motor drives and industrial equipment.

Alongside the MOSFET launch, the company has also recently introduced Merged-PiN Schottky (MPS) diodes engineered for high-performance applications including electric and hybrid vehicles, data centres and AI infrastructure, renewable energy and grid systems, industrial drives, aerospace and defence, and green hydrogen electrolysis systems, where efficiency, durability and thermal performance are critical.

Harshad Mehta, Non-Executive Chairman of RIR Power Electronics Ltd., said that the addition of 1200V SiC MOSFETs strengthens the company’s ability to provide high-performance silicon carbide solutions for next-generation power applications.

“With the addition of 1200V SiC MOSFET to our portfolio, we are advancing the accessibility and reliability of high-performance silicon carbide solutions for next-generation power applications,” he said, adding that the technology will support demanding sectors including electric vehicles, data centres, renewable energy and industrial systems.

RIR brings over 55 years of experience in high-power semiconductor technology and remains India’s only company with an existing high-power semiconductor fabrication capability. The company has proven expertise in devices rated up to 20,000V and 12,000A.

The firm is also developing a silicon carbide manufacturing campus in Odisha, aimed at building a vertically integrated ecosystem covering device design, wafer processing, packaging and application support. The facility is expected to strengthen domestic manufacturing of high-voltage SiC MOSFETs and diodes while supporting India’s growing demand for advanced power electronics across mobility, energy and industrial sectors.