Renesas Expands 5G mmWave Beamformer IC Family with Industry-Leading Transmitter Output Power Capability

Renesas Electronics Corporation, expanded its 5G beamformer IC family with two new dual-polarization mmWave devices optimized for 2x2 antenna architecture for 5G and broadband wireless applications with best-in-class performance at n257, n258, and 261 bands.

November 10, 2021. By News Bureau

Renesas Electronics Corporation , expanded its 5G beamformer IC family with two new dual-polarization mmWave devices optimized for 2x2 antenna architecture for 5G and broadband wireless applications with best-in-class performance at n257, n258, and 261 bands. 
 

The highly integrated F5288 and F5268 transmitter/receiver (8T8R) chipsets sit on a small 5.1mm x 5.1mm BGA package and feature the industry’s highest Tx output power capability in silicon – delivering more than 15.5dBm linear output power (note 1) per channel.

With this combination, Renesas enables cost-efficient radio design with extended signal reach for wireless infrastructure applications including wide-area, small cell and macro base stations, as well as CPE, fixed wireless access (FWA) access points, and various other applications.

The new F5288 and F5268 ICs feature a unique Dynamic Array Power (DAP) technology that enables high-efficiency operation at linear output power levels programmable from 10 dBm up to 16 dBm.

This makes the third-generation ICs ideal for use in mobile and fixed wireless applications with a wide range of output power requirements. This flexibility allows communications customers to reduce design times by repurposing their antenna array designs across different applications.

“Adequate signal range – or lack thereof – remains the biggest challenge as the industry shifts to 5G mmWave technologies for both urban and suburban mobile and fixed wireless networks,” said Naveen Yanduru, Vice President of RF Communications Product Division at Renesas.

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