Infineon Advances 200 mm SiC Manufacturing with Wolfspeed Deal

Infineon Technologies AG and Wolfspeed, have signed a new multi-year supply agreement for 200-millimetre Silicon Carbide (SiC) wafers, transitioning Infineon's existing Wolfspeed supply relationship from 150-millimetre to 200-millimetre substrate technology. SiC semiconductors have become a key enabling technology for the electrification and energy efficiency applications that drive global decarbonisation, from electric vehicles and renewable energy systems to AI datacentre power infrastructure. The agreement directly supports Infineon's conversion to 200-millimetre SiC manufacturing.

 Alexander Gorski, Chief Operations Officer at Infineon, said, “Silicon carbide is at the heart of the energy transition, and securing a high-quality, resilient supply of 200-millimetre substrates is essential to delivering on our customers’ long-term commitments. This agreement further broadens our strong supply base for our 200-millimetre high-volume manufacturing, building on a 20-year supply relationship between our two companies. It strengthens supply chain security for our customers and provides additional flexibility and scalability to support Infineon's future growth.”

AI datacentres are beginning to emerge as a significant demand driver for SiC power semiconductors. Power conversion efficiency across the datacentre power chain is a direct operating cost consideration for hyperscalers managing infrastructure at scale. The switching efficiency and thermal performance of SiC make it a technically suitable option for specific power conversion stages where silicon reaches its practical limits. Together with growing SiC adoption across electric vehicle drivetrains, solar inverters and industrial motor drives, these trends support a strong long-term outlook for high-quality 200-millimetre SiC substrates. 

The transition to 200-millimetre SiC wafers delivers large manufacturing economics compared to 150-millimetre production. Larger wafer diameter increases usable die area per wafer, reduces per-unit substrate cost and improves overall manufacturing efficiency. Infineon operates a multi-source SiC substrate strategy to maintain supply chain flexibility and quality across its global manufacturing network, including its world-class 200-millimetre SiC fab in Kulim, Malaysia, which is designed to be the world’s largest and most competitive silicon carbide manufacturing facility.